FJP13009H2TU 数据手册
其他文档
FJP13009 7 pages
TO220B03 Pkg Drawing 1 pages
技术规格
- RoHS: true
- Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet: onsemi FJP13009H2TU
- Transistor Type: NPN
- Operating Temperature: +150°C@(Tj)
- Collector Current (Ic): 12A
- Power Dissipation (Pd): 100W
- Transition Frequency (fT): 4MHz
- DC Current Gain (hFE@Ic,Vce): 15@5A,5V
- Collector Cut-Off Current (Icbo): -
- Collector-Emitter Breakdown Voltage (Vceo): 400V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 3V@12A,3A
- Package: TO-220
- Manufacturer: onsemi
- Series: -
- Packaging: Tube
- Part Status: Active
- Current - Collector (Ic) (Max): 12A
- Voltage - Collector Emitter Breakdown (Max): 400V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 3A, 12A
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5A, 5V
- Power - Max: 100W
- Frequency - Transition: 4MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220-3
- Base Part Number: FJP13009